LEC SI-Ga As中AB微缺陷和它对MESFET跨导性能的影响  

Microdefects in Semi-Insulating GaAs and Their Effect on g_m of MESFET

作　　者：徐岳生[1] 付生辉[1] 刘彩池[1] 王海云[1] 魏欣[1] 郝景臣[2] 

机构地区：[1]河北工业大学材料学院信息功能材料研究所,天津300130 [2]中国电子科技集团公司第13所,河北石家庄050051

出　　处：《稀有金属》2004年第3期540-543,共4页Chinese Journal of Rare Metals

基　　金：国家自然科学基金 ( 60 2 760 0 9) ;中国人民解放军总装备部 ( 0 0JS0 2 .2 .1QT45 0 1);省自然科学基金 ( 5 990 3 3 )资助项目

摘　　要：用AB腐蚀液对SI GaAs晶片进行AB微缺陷显示 (AB微缺陷密度AB EPD :10 3～ 10 4 cm- 2 量级 ) ,用KOH腐蚀液显示位错 (位错密度EPD :10 4cm- 2 量级 ) ,发现衬底上的位错对器件跨导没有明显的影响 ,而用AB腐蚀液显示的AB微缺陷对器件性能及均匀性有明确的影响 :低AB EPD的片子跨导大 ;高AB EPD的片子跨导小。AB EPD有一临界值 ,当AB EPD高于此值时 ,跨导陡然下降。另外 ,还利用扫描光致发光光谱 (PLmapping)对衬底进行了测量 ,得出了与上述结果相符的结果。We found dislocations density (EPD) of the substrate revealed by KOH solution has no definite effect on g_m of the MESFET, while the density of the precipitate-like microscopic defects (AB-EPD) revealed by AB solution has. The AB-EPD ranged from 10~3 to 10~4 cm^(-2), while the average EPD is of the order of 10~4 cm^(-2). It is found that g_m is large in the case of low AB-EPD wafer, while it is small in the case of high AB-EPD wafer. There is a critical value for AB-EPD, once AB-EPD is higher than the critical value, g_m dropps dramatically. The quality of substrates were also studied by PL mapping whose result agrees with the above results.

关 键 词：LEC SI-GAAS AB-EPD 跨导 衬底 位错 PL mapping 临界值 

分 类 号：TN3[电子电信—物理电子学]