Cu_2SnS_3薄膜的制备及性能研究  

Study on the Preparation and Their Properties of Cu_2SnS_3 Thin Films

作　　者：杜金会[1] 于振瑞[1] 张加友[1] 王妍妍[1] 李正群[1] 

机构地区：[1]军事交通学院基础部,天津300161

出　　处：《光电子技术》2004年第3期151-155,158,共6页Optoelectronic Technology

基　　金：国家自然科学基金资助项目 (No.5 0 1 72 0 6 1 )

摘　　要：采用 LBL(layer- by- layer)法制备了 Cu2 Sn S3 薄膜。即首先采用电化学方法在 Sn O2 衬底上制备 Sn S薄膜 ,然后又在其上用化学沉积法制备 Cu S薄膜 ,最后进行退火处理得到厚度约为960 nm的 Cu2 Sn S3 薄膜。探讨了薄膜的制备机理、生长速度、结构和光学特性。制备的薄膜为多晶(Cu2 Sn S3 ) 72 z(三斜或假单斜晶系 )结构 ,其直接光学带隙约为 1 .0 5 e V。In this paper, Cu_2SnS_3 was prepared with LBL (layer-by-layer) method, in which SnS thin film was first electrodeposited on SnO_2 transparent conducting glass substrate, and then CuS thin film was prepared on it with chemical bath deposition method, at last, thermal annealing of this double layer specimen was performed in order to obtain Cu_2SnS_3 thin film. The thickness of the as-prepared film is 960 nm. The mechanism of the methods was explored; the growing rate and the structural & optical properties of the films were also studied. The as-prepared films are of polycrystalline (Cu_2SnS_3)72z with triclinic (pseudo-monoclinic) structure. The direct optical band gap of the film is 1.05 eV.

关 键 词：Cu2SnS3薄膜 LBL(1ayer-by-layer)法 结构特性 光学特性 

分 类 号：TN304.055[电子电信—物理电子学]