硅基高频器件与SiGe外延技术  

Silicon Based High Frequency Devices and SiGe Epitaxy Technique

作　　者：崔继锋[1] 叶志镇[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,纳米科技中心,杭州310027

出　　处：《世界科技研究与发展》2004年第3期32-38,共7页World Sci-Tech R&D

摘　　要：本文描述了应用于SiGe外延的分子束外延 (MBE)、超高真空化学气相沉积 (UHV/CVD)、常压化学气相沉积 (APCVD)、快速热化学气相沉积 (RTCVD)等几种工艺及这几种工艺中的常见问题 ,并介绍了近来这些SiGe外延技术的改进 ,最后从器件角度对以上几种工艺特性进行了比较。This article focuses on the actual growth processes of SiGe strained layers. Molecular beam epitaxy (MBE) is described along with three types of chemical vapor deposition: ultrahigh vacuum (UHV/CVD),atmospheric pressure (APCVD),and rapid thermal chemical vapor deposition (RTCVD). The generic issues and the recent improvements are addressed with the specific process. Further,the characteristic of each process is compared relevant to the application in devices.

关 键 词：硅基高频器件 SIGE 外延技术 常压化学气相沉积 分子束外延 锗硅材料 

分 类 号：TN305[电子电信—物理电子学]