AlGaN/GaN共栅共源HEMTs器件  

AlGaN/GaN Microwave Cascode HEMTs

作　　者：邵刚[1] 刘新宇[1] 刘键[1] 和致经[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2004年第3期385-388,共4页Chinese Journal of Electron Devices

基　　金：国家重点基础研究发展计划项目 ( 2 0 0 2 CB3 1 1 90 3 );中国科学院重点创新资助项目 ( KGCX2 -SW-1 0 7)

摘　　要：研究了蓝宝石衬底 Al Ga N/Ga N共栅共源器件的特性。该器件包括栅长 0 .8μm共源器件与栅长 1 μm的共栅器件。研究表明 ,共栅共源器件的第二栅压对的器件饱和电流与跨导有明显的调制作用 ,容易实现功率增益控制。与共源器件相比 ,共栅共源器件在微波特性上 f T 大约 9GHz,比共源器件稍小 ,但是具有较低的反馈 ,显著增加的功率资用增益及较高的端口阻抗 ,与共源器件相比 ,稳定性更好 ,可以避免振荡的产生 ,结合 Ga N的高功率特性 GaThis paper reports on the fabrication and characteristics of AlGaN/GaN cascode HEMTs grown on sapphire substrates. The circuit described here employs as a common source device with gate length of 0.8 μm cascode connected to a 1 μm common gate device. The second gate bias will remarkably affected saturation current and transconductance and realize power gain control. The cascode device exhibits a slight low f_T of 9 GHz, a decrease feedback, a large increase of maximum available gain and a high impedance compared to those of common source device. Stability test shows that cascode device has much high stability performance which prevent oscillation in circuit application. Such merits combined with high power property of GaN material made AlGaN/GaN cascode device be very suitable for applying it as a based cascode device in the high power, broadband microwave field.

关 键 词：共栅共源AlGaN/GaN HEMTS 微波 功率增益 

分 类 号：TN325[电子电信—物理电子学]