脉冲磁过滤阴极弧等离子体制备四面体非晶碳膜  

Preparation of ta-C films by pulsed magnetic filtered cathode arc deposition

作　　者：张成武[1] 李国卿[1] 柳翠[1] 关秉羽[2] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,辽宁大连116024 [2]沈阳北宇真空设备厂,辽宁沈阳110045

出　　处：《真空》2004年第4期114-116,共3页Vacuum

基　　金：国家 8 6 3计划 (2 0 0 1AA 3380 10 )

摘　　要：介绍了脉冲磁过滤阴极电弧法制备四面体非晶碳膜 (tetrahedral am orphous carbon即 ta- C) ,并对制得的薄膜表面形貌、硬度、电阻等进行了测试。结果表明 ,脉冲磁过滤阴极电弧法制备的 ta- C膜有优良的性能。拉曼光谱分析显示 ,制得的薄膜为非晶结构 ,有明显的 sp3结构特征 ,符合 ta-The deposition process of tetrahedral amorphous carbon by a pulsed magnetic filtered cathodic arc deposition system is briefly introduced. The properties of the films, such as morphology, hardness and resistance, are also tested. The (results) showed that the films have excellent performance. According to Raman spectra, the films are of amorphous structure and have the characteristics of sp^3 bonds and ta-C films.

关 键 词：脉冲磁过滤阴极电弧法 四面体非晶碳膜 ta-C膜 拉曼光谱 偏压 类金刚石膜 

分 类 号：TB43[一般工业技术]