反应磁控溅射法制备的氟化类金刚石薄膜的XPS结构研究  

XPS study of fluorinated diamond-like carbon films prepared by reactive magnetron sputtering

作　　者：江美福[1] 宁兆元[1] 

机构地区：[1]苏州大学物理科学与技术学院,苏州215006

出　　处：《物理学报》2004年第9期3220-3224,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :10 175 0 48)资助的课题~~

摘　　要：采用射频反应磁控溅射法用高纯石墨作靶、三氟甲烷 (CHF3)和氩气 (Ar)作源气体制备了氟化类金刚石 (F DLC)薄膜 ,通过XPS光谱结合拉曼光谱、红外透射光谱和紫外 可见光光谱研究了源气体流量比等工艺条件对薄膜中键结构、sp2 sp3杂化比以及光学带隙等性能的影响 .结果表明在低功率 (6 0W)、高气压 (2 0Pa)和适当的流量比(Ar CHF3=2∶1 )下利用射频反应磁控溅射法可制备出氟含量高且具有较宽光学带隙和超低介电常数的FFluorinated diamond_like carbon(F_DLC) films were prepared by radio frequency(RF) reactive magnetron sputtering with trifluoromethane (CHF 3) and argon as source gases, and pure graphite as a target. The influence of source gas flow rate ratio on the film bonding configuration, sp 2/sp 3 hybrid ratios and optical band gap were investigated by Raman, Infrared transmission spectra, UV_visible spectra and XPS spectra. The results show that F_DLC films with high fluorine content, wide optical band gap and ultra_low dielectric constant can be prepared by RF reactive magnetron sputtering technique in low input RF power (60W), high pressure (2 0Pa) and proper source gas flow ratio (Ar/CHF 3=2∶1).

关 键 词：反应磁控溅射法 氟化类金刚石薄膜 红外透射光谱 XPS光谱 光学带隙 

分 类 号：O484[理学—固体物理]