电子束辐照对Poly-SiO_2/Si结构平带电压的影响  

The Flat-band Voltage of Poly-SiO_2/Si Structure Affected by Electron Irradiation

作　　者：向少华[1] 谢茂浓[2] 张明高[2] 

机构地区：[1]怀化学院物理系,湖南怀化418000 [2]四川大学物理系,四川成都610064

出　　处：《怀化学院学报》2003年第5期32-35,共4页Journal of Huaihua University

基　　金：国家自然科学基金资助项目(编号 2 97710 2 4);怀化学院院级资助科研项目

摘　　要：利用剂量为 10 13 cm～ 10 16 cm- 2 ,能量为 0 .4Mev～ 1.8Mev的电子束辐照Poly -SiO2 Si结构 ,对辐照后样品进行了C -V特性曲线测试 .测试结果表明 ,高能电子束辐照Poly -SiO2 Si结构引起的MOS电容平带电压随辐照剂量、能量的增加而发生漂移 ,但其漂移量低于同一实验环境中干氧氧化生长的SiO2The flat-band voltage of Poly-SiO 2/Si structure is investi ga ted by the high-frequency (1MHz) C-V technique after electron beam with flux fro m 10 13 cm -2 to 10 16 cm -2 and energy ranging from 0.4 Mev to1.8 Mev. It is shown that the flat-band voltage of Poly-SiO 2/Si struct ure shifts with the increasing of electron beam flux and energy, however, the sh ift of Poly-SiO 2/Si structure is much less than that of SiO 2/Si structure fo rmed by dry-oxygen at 1050° in the same experimental environment.

关 键 词：原子-腔模拉曼 平带电压 聚硅烷 等离子体 四氢呋喃 抛光硅片 

分 类 号：O536[理学—等离子体物理]