半绝缘磷化铟中与非化学配比有关的深能级缺陷(英文)  

Non-stoichiometry Related Deep Level Defects in Semi-insulating InP

作　　者：赵有文[1] 董志远[1] 段满龙[1] 孙文荣[1] 杨子祥[1] 吕旭如[1] 王应利[1] 

机构地区：[1]中国科学院半导体研究所材料科学中心,北京100083

出　　处：《人工晶体学报》2004年第4期535-538,共4页Journal of Synthetic Crystals

基　　金：theNationalNaturalScienceFoundationofChina (No .1 0 3750 4 3)

摘　　要：在不同的化学配比条件下制备了半绝缘磷化铟材料 ,其中包括配比和富铟熔体中的铁掺杂以及磷气氛和磷化铁气氛下高温退火非掺杂晶片。在这些半绝缘磷化铟材料中检测到了与非化学配比有关的深能级缺陷。通过对大量的原生掺铁和非掺退火半绝缘磷化铟材料中的缺陷的研究 ,发现原生深能级缺陷与材料的电学参数质量密切相关。迁移率低、热稳定性差的掺铁半绝缘磷化铟材料中有大量的能级位于 0 .1～ 0 .4eV之间的缺陷。高温退火非掺磷化铟抑制了这些缺陷的产生 ,获得了迁移率高、均匀性好的高质量半绝缘材料。根据这些结果 ,我们提出了一种通过控制化学配比制备高质量半绝缘磷化铟材料的方法。Semi-insulating (SI) InP materials have been prepared under different stoichiometric conditions, including Fe-doping in indium-rich melt and high temperature annealing undoped wafer in phosphorus and iron phosphide ambients. Deep level defects related with non-stoichiometry have been detected in the SI-InP samples. A close relationship between the material quality of electrical property and native deep defects has been revealed by a comprehensive study of defects in as-grown Fe-doped and annealed undoped SI-InP materials. Fe-doped SI-InP material with low carrier mobility and poor thermal stability contains a high concentration of deep defects with energy levels in the range of 0.1-0.4eV. The suppression of the defects by high temperature annealing undoped InP leads to the manufacture of high quality SI-InP with high mobility and good electrical uniformity. A technology for the growth of high quality SI-InP through stoichiometry control has been proposed based on the results.

关 键 词：半绝缘磷化铟 深能级缺陷 磷化铁 高温退火非掺杂晶片 原生掺铁 

分 类 号：TN304[电子电信—物理电子学]