电子束蒸发制备ZnO薄膜及其晶体结构和电学性质  

Structures and Electric Properties of ZnO Thin Films Prepared by Electron Beam Evaporation

作　　者：孟宪权[1] 陈巍[1] 李惟芬[1] 张观明[1] 马飞[1] 王栋[1] 

机构地区：[1]武汉大学物理科学与技术学院,湖北武汉430072

出　　处：《武汉大学学报（理学版）》2004年第5期563-567,共5页Journal of Wuhan University:Natural Science Edition

基　　金：国家自然科学基金资助项目(90101002)

摘　　要：采用电子束蒸发法制备了ZnO薄膜,研究了退火温度及衬底对薄膜的结晶状况以及电学性质的影响.X射线衍射测试结果表明,相同蒸发条件下制备的ZnO薄膜,硅(100)衬底上薄膜晶粒尺寸为73nm,结晶情况明显好于陶瓷和玻璃衬底上的薄膜.退火之后,各种衬底上薄膜的结晶情况相对未退火时都有明显好转;400℃退火时,薄膜逐渐结晶;600℃退火时,ZnO薄膜体现良好的择优生长的趋势,晶粒长大,晶化程度提高,大部分晶粒发生了织构.在400℃退火后,掺入Al2O3的薄膜和未掺杂的ZnO薄膜的电阻率下降了一个多数量级,但掺入MgO的薄膜电阻率变大,这是由于MgO掺杂起到了补偿作用,掺入MgO有可能实现ZnO薄膜的p型掺杂.The structure and electronic properties of the ZnO films, grown by E-beam evaporation, were studied with XRD and four-probe method. The results of X-ray diffraction showed that the annealing temperatures and the types of substrate affect the quality of the films produced under the same condition. After being annealed, the crystallization of the films on different substrates is much better than that without annealing. The thin film crystallizes gradually after being annealed at 400 ℃. When annealing at the temperature of 600 degree centigrade, the ZnO thin films show a good tendency of crystalline grain arranging along one superior direction, and the crystal grains become larger. Furthermore, after annealing at the temperature of 400 ℃, the resistivity of the thin film has greatly changed. The resistivity of the thin films with the Al_(2)O_(3 )mixture and the pure ZnO thin film has decreased about one numeral order, but the one with the MgO mixture has increased, this is because the MgO mixture has played a role of compensation. To add the MgO content,it is possible to realize the p-type conducting in ZnO thin films.

关 键 词：电子束蒸发 制备 氧化锌薄膜 晶体结构 电学性质 退火 P型掺杂 

分 类 号：TN304.21[电子电信—物理电子学] O484.42[理学—固体物理]