抑制亚微米NMOS穿通效应的Taurus WorkBench——TCAD优化  

Platform of DSM TCAD Simulation and Optimization:Taurus WorkBench

作　　者：李静[1] 李惠军[1] 

机构地区：[1]山东大学信息科学与工程学院,济南250100

出　　处：《半导体技术》2004年第9期12-14,29,共4页Semiconductor Technology

摘　　要：Taurus WorkBench是用于超深亚微米层次下的TCAD一体化仿真优化平台。在介绍了TWB的主要功能及实施要点之后,以亚微米NMOSFET器件的阈值电压及源漏穿通电压为响应变量,采用DOE方法进行仿真,并以仿真结果阐述了注入剂量及注入能量对阈值电压V和源漏穿通电压V的影响。Taurus WorkBench is a platform used for VDSM TCAD simulation and optimization.The capabilities and the mechanism of this system, the threshold voltage(Vt) and punchthroughvoltage(Vbrk) of an submicron NMOS were chosen as responses in DOE simulation. The relationshipsbetween threshold voltage(Vt), punchthrough voltage(Vbrk) and the implant dose (PNCH_Dose),implant energy (PNCH_Energy) were demonstrated according to the DOE simulation results.

关 键 词：TAURUS WORKBENCH 超深亚微米 TCAD NMOSFET 阈值电压 穿通效应 

分 类 号：TN402[电子电信—微电子学与固体电子学]