GaN薄膜的研究进展  

Research progress in GaN thin films

作　　者：马洪磊[1] 杨莺歌[1] 刘晓梅[2] 刘建强[1] 马瑾[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100 [2]山东大学计算机科学与技术学院,山东济南250100

出　　处：《功能材料》2004年第5期537-540,544,共5页Journal of Functional Materials

摘　　要：　由于GaN薄膜有希望应用在紫外或蓝光发光器件、探测器以及高速场效应晶体管、高温电子器件,GaN材料是当前研究的一个焦点。本文简要介绍了GaN薄膜的制备、衬底选择、掺杂、缓冲层、发光机制和表征等方面的最新进展,指出GaN材料进一步发展需要解决的关键技术问题。GaN thin films are the focus of current research because of the promise for use as UV or blue emitters, detectors, high-speed field-effect transistor, and high-temperature electronic devices. Recent development for GaN thin films in preparation, choice of substrates, doping, buffer layer, photoluminescence mechanism and characterization was briefly described and reviewed. The key technologies to be solved for GaN thin films were pointed out.

关 键 词：GAN薄膜 研究进展 发光机制 

分 类 号：O484[理学—固体物理]