一种高工作频率、低相位噪声的CMOS环形振荡器  

A CMOS Ring VCO with High Operating Frequency and Low Phase Noise

作　　者：陈莹梅[1] 王志功[1] 朱恩[1] 冯军[1] 章丽[1] 熊明珍[1] 

机构地区：[1]东南大学射频与光电集成电路研究所,南京210096

出　　处：《光电子．激光》2004年第10期1141-1143,共3页Journal of Optoelectronics·Laser

基　　金：国家863计划资助项目(2001AA312060)

摘　　要：采用全开关状态的延时单元和双延时路径两种电路技术设计了一种高工作频率、低相位噪声的环形振荡器。环路级数采用偶数级来获得两路相位相差90°的正交输出时钟,芯片采用台湾TSMC0.18μmCMOS工艺。测试结果表明,振荡器在5GHz的工作频率上,在偏离主频10MHz处相位噪声可达-89.3dB/Hz。采用1.8V电源电压时,电路的功耗为50mW,振荡器核芯面积为60μm×60μm。The two circuit techniques of full switching delay cells and dual-delay path to design a high operate frequency,low phase noise ring oscillator were presented.An even-stage ring oscillator is adopted to generated two quadrature output clock of 90° phase differences.The chip is fabricated in 0.18 μm CMOS process of TSMC in Taiwan,Measured phase noise at 10 MHz offset from the 5 GHz center frequency is -89.3 dB/Hz.With the 1.8 V-power supply,the core circuit power is 50 mW,the chip core area is 60 μm×60 μm.

关 键 词：低相位噪声 环形振荡器 工作频率 CMOS工艺 TSMC 功耗 电路 主频 环路 芯片 

分 类 号：TN492[电子电信—微电子学与固体电子学] TP332[自动化与计算机技术—计算机系统结构]