1.78μm应变InGaAs-InGaAsP-InP分布反馈量子阱激光器(英文)  

1.78 μm Strained InGaAs-InGaAsP-InP DistributedFeedback Quantum Well Lasers

作　　者：王书荣[1] 王辉[2] 王宝军[1] 朱洪亮[1] 张靖[1] 丁颖[1] 赵玲娟[1] 周帆[1] 王鲁峰[1] 王圩[1] 

机构地区：[1]中国科学院半导体研究所光电子研发中心 [2]香港中文大学电子工程系

出　　处：《光电子．激光》2004年第8期906-909,共4页Journal of Optoelectronics·Laser

基　　金：SupportedbytheNationalNaturalScienceFoundationofChina(60 1 760 2 3)

摘　　要：采用低金属有机汽相外延(LP MOVPE)生长大应变InGaAs/InGaAsP做有源区,研制了激射波长为1.78μm的脊波导分布反馈(DFB)激光器,对于解理腔长为900μm的激光器,室温时其激射的阈值电流为33mA,最大单面光输出功率/和单面外微分量子效率分别为8mW和7%;此外,激射光谱边模抑制比(SMSR)为27.5dB。Ridge-waveguide distributed-feedback (DFB) lasers with highly strained InGaAs/lnGaAsP active regions, emitting at 1.78 μm were fabricated by low pressure metal-organic vapor phase epitaxy (LPMOVPE) and tested. The lasers exhibited threshold current of 33 mA for 900 μm long cavities at room temperature. A maximum light output power of 8 mW from one facet and an external differential quantum efficiency of 7% were also obtained. In addition, the side mode suppression ratio (SMSR) is 27.5 dB.

关 键 词：分布反馈 量子阱激光器 DFB 边模抑制比 脊波导 汽相外延 腔长 外微分 分量 光谱 

分 类 号：TN248[电子电信—物理电子学] TN304