掺杂浓度对槽栅nMOSFET特性的影响研究  

Effects of Doping Concentration on the Characteristics of Grooved-Gate MOSFET's

作　　者：童建农[1] 邹雪城[1] 沈绪榜[1] 

机构地区：[1]华中科技大学设计中心,湖北武汉430073

出　　处：《微电子学》2004年第5期510-513,共4页Microelectronics

摘　　要：　讨论了槽栅结构nMOSFET的掺杂浓度对器件特性的影响,并通过二维器件仿真程序PISCES-II进行了计算模拟比较。结果表明,提高衬底掺杂浓度,能使源漏区与沟道之间的拐角效应增大,对热载流子效应抑制的作用明显;提高沟道掺杂浓度,能减小沟道电荷的调制效应,使阈值电压更好。调节沟道掺杂浓度比调节衬底掺杂浓度对器件的影响更大。Effects of doping concentration on the characteristics of grooved-gate MOSFET's are simulated using classical 2-D device simulator PISCES-II. It has been shown that the corner effect is strengthened with increasing substrate doping concentration, which improves the hot-carrier-effect immunity, and the modulation effect of the channel electric charge is weakened with increasing channel doping concentration, which results in better threshold voltage. The influence of channel doping on the characteristics of grooved-gate MOSFET's is larger than substrate doping.

关 键 词：槽栅MOSFET 掺杂 短沟道效应 热载流子退化 

分 类 号：TN303.12[电子电信—物理电子学]