O_2+CHCCl_3氧化对6H-SiC MOS电容界面特性的改善  

Improvements on Interface Properties of 6H-SiC MOS Capacitors by O_2+CHCCl_3 Oxidation

作　　者：吴海平[1] 徐静平[1] 李春霞[1] 梅慧兰[2] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]武汉大学电气工程学院,湖北武汉430072

出　　处：《微电子学》2004年第5期536-539,共4页Microelectronics

基　　金：国家自然科学基金资助项目(60176030)

摘　　要：　采用新颖的干O2+CHCCl3(TCE)氧化工艺,制备了P型和N型6H-SiCMOS电容器,并与常规热氧化工艺以及氧化加NO退火工艺进行了对比实验。结果表明,O2+TCE氧化不仅提高了氧化速率,而且降低了界面态密度和氧化层有效电荷密度,提高了器件可靠性。可以预测,O2+TCE氧化与湿NO退火相结合的工艺是一种有前途的制备高沟道迁移率、高可靠性SiCMOS-FET的栅介质工艺。A new process of growing SiO_2 on n- and p-type 6H-SiC wafers in dry O_2 + trichloroethylene(TCE)to prepare SiC MOS capacitors is presented. A comparison experiment is made between the new process and the conventional oxidation with or without nitric oxide(NO)annealing. It is demonstrated that the O_2+TCE oxidation can not only increase oxidation rate, but also decrease interface-state density and effective oxide-charge density, and enhance reliabilities of SiC MOS devices. It is predicted that O_2+TCE oxidation, combined with wet NO annealing, will become a promising gate dielectric process for high channel mobility and high reliability SiC MOSFET's.

关 键 词：SIC MOS电容 界面态密度 可靠性 三氯乙烯 

分 类 号：TN304.24[电子电信—物理电子学] TN386.1