影响PMOSFET中NBTI效应的相关因素研究  

A Study on Effects of Relevant Factors on NBTI in PMOSFET's

作　　者：韩晓亮[1] 郝跃[1] 刘红霞[1] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071

出　　处：《微电子学》2004年第5期547-550,共4页Microelectronics

基　　金：国家自然科学基金资助项目(60206006);军事重大预研项目(41308060305)

摘　　要：　在PMOSFET上施加负栅压和高温应力后,出现的NBTI效应是超深亚微米MOS器件中重要的可靠性问题之一。研究了NBTI效应对PMOSFET器件参数的影响及其产生机理;基于NBTI效应的产生模型,分析了Si/SiO2界面处氢、氮和水等相关因素对NBTI效应的影响;介绍了减小NBTI效应的方法。Negative bias temperature instability(NBTI)effect in pMOSFET's, which is induced by the application of negative gate bias and high temperature stress, is one of the key problems for reliability of MOS devices. NBTI effect on device parameters and its generation mechanism are investigated. Based on the generation model, effects of different factors, including hydrogen, deuterium, nitrogen and water, on NBTI in pMOSFET's are discussed. Finally, methods to minimize NBTI effects are proposed.

关 键 词：NBTI效应 PMOSFET 界面陷阱 氧化层固定电荷 

分 类 号：TN306[电子电信—物理电子学] TN386.1