CF_4气体ICP等离子体中的双温电子特性  

Characteristics of two-electron-temperature in inductively coupled CF_4 plasmas

作　　者：黄松[1] 宁兆元[1] 辛煜[1] 甘肇强[1] 

机构地区：[1]苏州大学物理科学与技术学院,苏州215006

出　　处：《物理学报》2004年第10期3394-3397,共4页Acta Physica Sinica

摘　　要：使用朗谬尔探针方法研究了低压CF4 气体感应耦合等离子体 (ICP)的放电特性 .结果表明 ,CF4 等离子体的电子呈现双温分布 :一类是密度低、能量高的快电子 ,另一类是密度高、能量低的慢电子 .快电子温度The、慢电子温度Tce以及它们的平均电子温度Te 随射频输入功率的增加而下降 ;而它们的密度nhe,nce和ne 随功率的增加而上升 .The characteristics in low-pressure inductively coupled CF_4 plasma have been investigated using a Langmuir probe method. Results for the CF_4 gas have shown that there are two electron populations: one with low temperature and high density and the second with higher temperature and lower density, in this region. Fast electron temperature T_(he), slow electron temperature T_(ce) and mean electron temperature T_e decrease, while their densities n_(he), n_(ce), n_e increase with increasing r.f. input power. Our findings suggest that the dependence of two-electron-temperature on r.f. input power can be explained by the thermodynamic equilibrium of the collision between electrons and particles.

关 键 词：电子温度 电子特性 粒子碰撞 感应耦合等离子体 气体 上升 平均 CF4 射频 放电特性 

分 类 号：O531[理学—等离子体物理]