退火温度对纳米ZnO薄膜结构与发光特性的影响  

Influences of annealing temperature on the structure and luminescence of nanometer ZnO films

作　　者：陈晓清[1] 谢自力[1] 张荣[1] 修向前[1] 顾书林[1] 韩平[1] 施毅[1] 郑有炓[1] 

机构地区：[1]江苏省光电信息功能材料重点实验室南京大学物理系,江苏南京210093

出　　处：《微纳电子技术》2004年第11期24-27,共4页Micronanoelectronic Technology

基　　金：国家重点基础研究发展规划(G2000068305);国家高技术研究发展规划(2001AA311110;2003AA311060);国家自然科学基金(69976014;69806006;69987001);国家杰出青年基金(60025411);江苏省自然科学基金重点项目资助(BK2003203)

摘　　要：利用溶胶鄄凝胶法在硅衬底上制备了纳米ZnO薄膜。研究了热处理对ZnO薄膜的质量与发光性能的影响。结果表明,纳米ZnO薄膜具有六方纤锌矿结构,并且,随着退火温度的升高,ZnO的晶粒变大,c轴取向性变好,紫外发光强度增强。Nanometer ZnO film was fabricated on Si substrate by Sol-Gel methods. The influences of annealing temperature on the quality and the properties of luminescence of the ZnO film was investigated. Results show that after annealing,the ZnO nanometer thin films showed a hexagonal wurtzite structure,and the grain size of the ZnO nanometer films increases. The c-axis orientation was enhanced and a strong emission band appeared in ultraviolet region with annealing temperature increasing.

关 键 词：纳米ZNO薄膜 发光特性 硅衬底 退火温度 发光性能 C轴取向 发光强度 紫外 溶胶-凝胶法 锌矿 

分 类 号：TN304.21[电子电信—物理电子学] O484.1[理学—固体物理]