分辨力增强技术在65nm浸没式ArF光刻中的应用  

Resolution Enhancement Technology in65nm ArF Immersion Lithog raphy

作　　者：李艳秋[1] 黄国胜[1] 

机构地区：[1]中国科学院电工研究所,北京100080

出　　处：《电子工业专用设备》2004年第11期9-13,22,共6页Equipment for Electronic Products Manufacturing

摘　　要：首次利用自主研发的光刻辅助设计软件MicroCruiser结合Prolith8.0.2,研究了分辨力增强技术在65nm浸没式ArF光刻中的应用,研究表明,相移掩模结合传统照明可以获得较大的工艺窗口,但是,引起的曝光图形偏移较大。而传统掩模结合离轴照明可以获得较大的工艺窗口,但是,引起的曝光图形偏移较小。因而,通过对单个像差的控制和进行的不同Zernike系数组合,可以大大减少曝光图形的偏移。For the first time to our knowledge,we employ the in house software MicroCruiser2.0and Pro-lith8.0.2to study the Resolution Enhancement Technology in65nm ArF Immersion Lithography.The re-sults show that large processing window can be reached but significant pattern displacement if phase shift mask with conventional illumination is used.While,large processing window and small pattern displace-ment can be obtained if binary mask with annular illumination is applied.However,the pattern displace-ment can be controlled very well if the Zernike coefficient can be designed in a good combination even the wavefront aberration is kept the same.

关 键 词：浸没式ARF光刻 下一代光刻 像差和图形偏移 工艺窗口 光刻仿真 

分 类 号：TN305.7[电子电信—物理电子学]