高压VDMOSFET的最佳设计  

The Optimally Design of High-Voltage VDMOSFET

作　　者：王中文[1] 

机构地区：[1]辽宁大学物理系,辽宁沈阳110036

出　　处：《辽宁大学学报（自然科学版）》2004年第4期367-370,共4页Journal of Liaoning University：Natural Sciences Edition

摘　　要：介绍了功率VDMOSFET导通电阻的模型,重点讨论了PW与PT对特征导通电阻RonA的影响,经过大量的理论计算,给出了击穿电压为500V,TOX与RonA的关系曲线.首次提出RonA与PW/PT有最佳比例关系.In this paper the on resistance model of power VDMOSFET is introduced. The effects of wideness P w and P T on special on-state resistance R onA are discussed in detail. After a number of theoretical caculations, the curve of relationship of T OX and R onA is obtained when BV DS =500 V. The relationship of optimal cell dimensions and P W/P T are also first presented.

关 键 词：功率VDMOSFET 导通电阻 特征电阻 单胞 

分 类 号：TN386.1[电子电信—物理电子学]