4H-SiC MESFET高频小信号特性的模拟与分析  

Simulation and analysis of high frequency small-signal characteristics for 4H-SiC MESFETs

作　　者：王雷[1] 张义门[1] 张玉明[1] 盛立志[1] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071

出　　处：《西安电子科技大学学报》2004年第6期825-828,共4页Journal of Xidian University

基　　金：国家部委预研资助项目(413080600107)

摘　　要：建立了4H SiCMESFETs的模型,运用二维器件模拟软件MEDICI对4H SiCMESFETs的高频小信号特性进行了研究.利用正弦稳态分析的方法对4H SiCMESFETs的高频小信号特性进行了模拟,模拟结果与实验数值比较表明在特征频率fT以内得到了较为满意的结果.分析了不同的栅长、栅漏间距、不同的沟道掺杂以及温度变化对SiCMESFET特征频率fT的影响.Small-signal high frequency characteristics of 4H-SiC MESFETs have been studied with the two-dimensional device simulator MEDICI based on the operation model of 4H-SiC MESFETs developed in this paper. The simulation results using the Sinusoidal Steady-State analysis approach agree well with the experimental data within the cut-off frequency. The effects of the gate length, gate-to-drain spacer distances, impurity concentration and temperature on the high frequency characteristic of SiC MESFETs have been studied based on the presented model.

关 键 词：4H-SIC 金属-半导体场效应晶体管 高频小信号 特征频率 

分 类 号：TN303[电子电信—物理电子学]