蓝宝石衬底分步清洗及其对后续氮化的影响  

Study of ECR-plasma Cleaning and Nitridation of Sapphire Substrate Using RHEED

作　　者：郎佳红[1] 顾彪[1] 徐茵[1] 秦福文[1] 曲钢[1] 

机构地区：[1]大连理工大学三束材料表面改性国家重点实验室

出　　处：《半导体技术》2005年第1期57-60,共4页Semiconductor Technology

基　　金：国家自然科学基金自助项目(69976008)

摘　　要：通过反射高能电子衍射仪(RHEED)分析蓝宝石衬底在经过双热电偶校温的ECR-PEMOCVD 装置中清洗氮化实验表面晶质的RHEED图像,研究了常规清洗和ECR等离子体所产生的活性氢氮等离子体源对蓝宝石衬底清洗、氮化的实验。结果表明,经常规清洗后的蓝宝石衬底表面晶质差异较大,有些衬底再经通常的30min等离子体清洗是达不到要求的,而要根据情况施行分步清洗才能清洗充分,清洗充分的衬底经20min就可氮化出来,不充分的再长的时间也很难氮化。The normal cleaning effect and nitridation effect of hydrogen and nitrogen ECR plasma for sapphire substrates were researched by analyzing RHEED image in ECR-PEMOCVD system, The results indicated that much difference exists for surface quality of sapphire substrate by normal cleaning. Cleaning for 30 min for some substrates is insufficient and the multi-step cleaning is needed; Sufficiently cleaned sapphire substrates was nitrided for 20 min by ECR hydrogen and nitrogen plasma and smooth and clear nitridation layer can be obtained, while insufficiently cleaned ones cannot be nitrided for 20 min or longer.

关 键 词：蓝宝石 清洗 氮化 RHEED GAN 

分 类 号：TN305[电子电信—物理电子学] TN386