提升亚微米Si CMOS器件性能的新技术———应变Si技术  

Strained Si:New Technology for Upgrading the Performance of Deep Micron Si CMOS Devices

作　　者：陈长春[1] 余本海[1] 刘江峰[1] 刘志弘[2] 钱佩信[2] 

机构地区：[1]河南信阳师范学院物理电子工程学院,河南信阳464000 [2]清华大学微电子学研究所,北京100084

出　　处：《微纳电子技术》2005年第1期13-18,共6页Micronanoelectronic Technology

摘　　要：详细介绍了应变Si技术产生的起因及特性、应变Si器件的优势、应变 Si器件应用中存在的问题并对应变 Si技术的市场应用前景作了简单的介绍。The origin together with characteristic of strained Si technology are thoroughly described. The advantages of strained Si and potential obstacle for its application were also introduced,respectively. Finally,we also make a brief introduction for the market prospect of strained Si technology.

关 键 词：SIGE 应变硅 CMOS器件 

分 类 号：TN32[电子电信—物理电子学]