低能Ar离子束辅助沉积Ag(111)薄膜  

Low energy Ar^+ beam assisted deposition of Ag(111) films

作　　者：江炳尧[1] 蒋军[1] 冯涛[1] 任琮欣[1] 张正选[1] 柳襄怀[1] 郑里平[2] 

机构地区：[1]中国科学院上海微系统与信息技术研究所半导体功能薄膜工程技术研究中心,上海200050 [2]中国科学院上海应用物理研究所,上海201800

出　　处：《核技术》2005年第1期34-39,共6页Nuclear Techniques

基　　金：国家重点基础研究发展规划项目<973>资助(No.G2000067207-2)

摘　　要：采用低能Ar离子束辅助沉积方法,在Mo/Si(100)基底上制备Ag膜。实验发现,用Ar离子束溅射沉积的Ag膜呈(111)择优取向。若在溅射沉积Ag膜的同时,用能量为500eV的Ar离子束沿衬底法线方向对Ag膜进行辅助轰击,当离子/原子到达比为0.06时,Ag膜呈(111)择优取向;当离子/原子到达比增大到0.18时,Ag膜呈(111)和(100)混合晶向。若Ar离子的入射角为35.26°,离子/原子到达比为0.06时,Ag膜呈(111)择优取向;当离子/原子比增大到0.18时,Ag膜呈(111)和微弱的(100)混合晶向。若Ar离子的入射角为54.7°,离子/原子到达比为0.06时,沉积的Ag膜呈很强的(111)择优取向。Low energy ion beam assisted deposition (IBAD) was employed to prepare Ag films on Mo/Si(100) substrate. It was found that Ag films deposited by the sputtering method were with (111) preferred orientation. Ag films exhibited mixed (111) and (100) orientations if the growing films were bombarded by 500 eV Ar+ beam along normal direction with Ion/Atom arrival ratio of 0.18. Ag films exhibited highly preferred (111) orientation at incidence angle of 54.7o.

关 键 词：离子束辅助沉积 Ag膜 沟道效应 择优取向 

分 类 号：TG174.444[金属学及工艺—金属表面处理]