氢原子在Cat-CVD法制备多晶硅薄膜中的作用  

Effect of Hydrogen Radical on Growth of Polycrystalline Silicon Thin Film by Cat-CVD System

作　　者：邝俊峰[1] 付国柱[1] 高博[1] 高文涛[1] 黄金英[1] 廖燕平[1] 荆海[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所北方液晶工程研究开发中心,吉林长春130031

出　　处：《液晶与显示》2004年第6期450-454,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：国家"863"计划资助项目(No.2002AA303250);吉林省科技发展计划项目(No.20010305)

摘　　要：采用钨丝催化化学气相沉积(Cat CVD)方法制备多晶硅(p Si)薄膜,研究氢气稀释率(FR(H2)/(FR(H2)+FR(SiH4))对制备多晶硅薄膜的影响。XRD和喇曼光谱分析分别显示(111)面取向的多晶硅峰及喇曼频移为520cm-1多晶硅峰的强度随氢气稀释率的增加而增强,由喇曼光谱计算的结晶度也有同样的趋势。通过分析测试结果得出,氢原子以表面脱氢、刻蚀弱的Si—Si键,及进入晶格内部进行深度脱氢等方式改善薄膜材料的结晶度。Polycrystalline silicon (p-Si∶H) films were prepared by Cat-CVD.The changes of the crystallinity of polycrystalline silicon phase are studied in samples deposited with hydrogen dilution ratio, H_2/SiH_4.The structural properties of these films have been investigated by Raman spectroscopy and X-ray diffraction spectroscopy. Raman spectroscopy studies show the crystalline fraction polycrystalline silicon phase increased with increasing the H_2/SiH_4 ratio. In the XRD and Raman pattern, the intensity of Si(111) peak and Si(520 cm^(-1)) peak increased with increasing H_2/SiH_4. According to the results of detections, we can conclude that hydrogen radical improve the crystallinity of the films by dehydrogenizing at the surface of the films, etching weak Si-Si network and capturing the hydrogen covered in the films.

关 键 词：多晶硅薄膜 氢原子 催化化学气相沉积 

分 类 号：O484.1[理学—固体物理] TN304.055[理学—物理]