HFCVD法制备SiC材料及室温光致发光  

SiC Films Grown by HFCVD Method and Its Photoluminescence at Room Temperature

作　　者：王辉[1] 宋航[1] 金亿鑫[1] 蒋红[1] 缪国庆[1] 李志明[1] 赵海峰[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春130033

出　　处：《液晶与显示》2004年第6期455-457,共3页Chinese Journal of Liquid Crystals and Displays

基　　金：国家重点基础研究发展计划(No.2003CB314701);国家自然科学基金面上基金(No.60177014)

摘　　要：利用热丝化学气相沉积法(HFCVD)以CH4和SiH4作为反应气体在Si衬底上制备了SiC薄膜。用X射线衍射(XRD)、傅立叶红外吸收谱(FTIR)等手段对样品进行了结构和组分分析,分析结果表明已经在Si衬底上制备了SiC薄膜。对所制备的SiC薄膜进行了光致发光测试,在室温下观察到了薄膜峰值位于417nm和436nm的较强的可见光发射,认为这两个相近的蓝光发射起源可能是光激发载流子从SiC晶粒核心激发,然后转移到SiC晶粒表面发光中心上的辐射复合。The silicon carbide films were grown on the silicon substrate by hot filament chemical vapor deposition (HFCVD) technique with CH_4 and SiH_4 as reaction gases. Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) were employed to analyze the composition and structure of the films. The results show the formation of the silicon carbide films on the silicon substrate. The intense visible photoluminescence at 417 nm and 436 nm were observed in the films at room temperature. It can be suggested that the two blue light emitting are attributed to the radiation of the carriers, which are excited from the core of the SiC crystal particles, on the photoluminescent centers at the surface of the SiC crystal particles.

关 键 词：光致发光 碳化硅 HFCVD 

分 类 号：O484.4[理学—固体物理]