垒层Si掺杂对AlGaInP/GaInP多量子阱性能的影响  

Effect of Si-Doping in Barrier Layers on the Characteristics of AlGaInP/GaInP Multiple Quantum Wells

作　　者：谭春华[1] 范广涵[1] 周天明[1] 李述体[1] 黄琨[1] 雷勇[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广州510631

出　　处：《半导体技术》2005年第2期10-12,20,共4页Semiconductor Technology

基　　金：广州市科技重点计划项目(1999-2-035-1)资助

摘　　要：低压MOCVD方法生长了垒层掺Si与不掺Si的AlGaInP/GaInP多量子阱结构,运用X双晶衍射与光荧光技术研究了掺Si对量子阱性能的影响。测试结果表明垒层掺Si使量子阱的生长速度增加,掺Si 量子阱的光荧光强度比未掺Si量子阱的光荧光强度增强了13倍。AlGaInP:Si/GaInP and AlGaInP/GaInP MQW structures were grown by LP-MOCVD. The effect of Si-doping on the characteristics of AlGalnP/GalnP MQW was studied by using double crystal X-ray diffraction and photoluminescence. The results show that the growth rate of MQW increases with Si-doping and the intensity from MQW with Si-doped is strong as 13 times as that of undoped MQW.

关 键 词：X双晶衍射 MOCVD 量子阱 光荧光 

分 类 号：TN304.054[电子电信—物理电子学]