基于小信号等效电路模型的SiGe HBT高频特性模拟分析  

Simulation and Analysis of High-Frequency Characteristics of SiGe HBT's Based on Small-Signal Equivalent Circuit

作　　者：杨维明[1] 陈建新[1] 史辰[1] 李振国[1] 高铭洁[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院

出　　处：《微电子学》2005年第1期1-4,共4页Microelectronics

基　　金：北京市自然科学基金资助项目(4032005)

摘　　要：给出了fT为15 GHz的SiGe HBT器件的高频小信号等效电路模型;运用微波网络理 论,在Matlab软件平台上模拟出器件的S参数和H21参数曲线,模拟结果与实测结果相吻合;根据 电路的拓扑结构,分析了管壳封装带来的寄生参数对器件高频性能的影响;根据稳定性判据,计算 了器件的稳定性与工作频率之间的关系。为器件的设计和应用提供了理论依据。A high-frequency and small-signal equivalent circuit of SiGe HBT is presented in this paper. By using microwave network theory, S and H21 parameters of the device are simulated. Results from simulation are in good agreement with those from test. Furthermore, effects of package-induced parasitic parameters on the high-frequency characteristics are analyzed based on the circuit architecture. The relationship between operating frequency and stability of the device is given according to the judging criterion of stability. This will provide a method for computer-aided design of new devices.

关 键 词：锗硅合金 异质结双极晶体管 电路模型 模拟 

分 类 号：TN385[电子电信—物理电子学] TN402