半桥驱动器中高压电平位移电路的研究  

Research on High Voltage Level Shifter in Half-bridges Drive

作　　者：艾俊华[1] 何杞鑫[1] 方绍华[1] 

机构地区：[1]浙江大学,浙江杭州310027

出　　处：《电力电子技术》2005年第1期109-111,共3页Power Electronics

摘　　要：通过在半桥驱动器中使用高压电平位移电路可以得到所需的工作频率而无需脉冲变压器驱动功率开关,提高了电路的频率稳定性。运用MEDICI器件结构仿真工具对高压器件的结构进行了模拟仿真,达到了600V以上的耐压要求。最后用Hspice对电路进行了功能仿真并给出了实验结果。仿真采用0.6滋mBiCMOS工艺。Through the high level shifter in half-bridges,we can choose the expected working frequency without pulse-transformer to drive the power switch,thus the frequency stability of the circuit was enhanced.The structure of the high-voltage power device was verified and simulated by MEDICI,and the withstand voltage exceeds 600V.The circuit was simulated with Hspice based on 0.6?滋m BiCMOS technology and the experiment results are given.

关 键 词：驱动电路 半桥驱动器 电平位移 高压功率器件 

分 类 号：TN46[电子电信—微电子学与固体电子学]