电感耦合等离子体CVD低温生长硅薄膜过程中的铝诱导晶化  

Aluminum-induced crystallization during deposition of silicon films by inductively coupled plasma CVD

作　　者：王晓强[1] 栗军帅[1] 陈强[1] 祁菁[1] 尹旻[1] 贺德衍[1] 

机构地区：[1]兰州大学物理系,兰州730000

出　　处：《物理学报》2005年第1期269-273,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号 :10 175 0 3 0 );北京工业大学新型功能材料教育部重点实验室基金资助的课题~~

摘　　要：利用电感耦合等离子体CVD方法在 35 0℃的低温下在镀Al玻璃衬底上制备出具有良好结晶性的Si薄膜 .利用x射线衍射、紫外 可见分光椭圆偏振谱、原子力显微镜及x射线光电子谱等研究了薄膜的结构、表面形貌和成分分布等 .结果表明 ,用这种方法制备的Si薄膜不但晶化程度高 ,而且具有良好的 ( 111)结晶取向性 ,晶粒尺寸大于30 0nm ,样品中无Al的残留 .结合电感耦合等离子体的高电子密度特征讨论了低温生长过程中Al诱导Si薄膜晶化的机理 .Silicon thin films were deposited on Al-coated glass substrates by inductively coupled plasma chemical vapor deposition (ICP-CVD) in SiH4/H-2 mixtures at a low temperature of 350degreesC. The structure of the films was characterized by x-ray diffraction, x-ray photoelectron spectrum, atomic force microscopy and spectroscopic ellipsometry. It has been shown that the films are of a highly ordered structure with a strong (111) orientation. Grain size is larger than 300 nm. There is no residual Al in the films. Considering the high electron density in inductively coupled plasma, a preliminary interpretation is given for the mechanism of Al-induced crystallization during low-temperature deposition of Si films.

关 键 词：低温生长 电感耦合等离子体 X射线光电子谱 硅薄膜 衬底 分光 CVD 电子密度 结晶取向 晶化 

分 类 号：O484[理学—固体物理] TN304[理学—物理]