高饱和电流14xxnm应变量子阱激光器的研制  

High-Saturation Current 14xx nm Strained Quantum Well Lasers

作　　者：张洪波[1] 韦欣[1] 朱晓鹏[1] 王国宏[1] 张敬明[1] 马骁宇[1] 

机构地区：[1]中国科学院半导体研究所光电子器件国家工程中心,北京100083

出　　处：《中国激光》2005年第2期161-163,共3页Chinese Journal of Lasers

基　　金：国家863计划(2001AA312270)资助项目

摘　　要：　报道了14xx nm应变量子阱(SQW)激光器管芯的研制成果。通过金属有机化学气相沉积(MOCVD)生长工艺生长14xx nm AlGaInAs/AlInAs/InP应变量子阱外延片,采用带有锥形增益区的脊型波导结构制作激光器管芯。生长好的外延片按照双沟脊型波导激光器制备工艺进行光刻、腐蚀,制作P面电极(溅射 TiPtAu)、减薄、制作N面电极(蒸发AuGeNi),然后将试验片解理成Bar;为获得高的单面输出功率,用电子回旋共振等离子体化学气相沉积(ECR)进行腔面镀膜,HR=90%,AR=5%;解理成的管芯P面朝下烧结到铜热沉上,TO3封装后在激光器综合测试仪进行测试。管芯功率达到440 mW以上,饱和电流3 A以上,峰值波长1430 nm,远场发散角为40°×14°。The research of the 14xx nm strained quantum well (SQW) lasers is reported. The 14xx nm AlGaInAs/ AlInAs/InP SQW lasers with tapered gain regions emitting at 1430 nm are fabricated. The SQW epitaxial structure is grown by metal organic chemical vapor deposition (MOCVD) and ridge-type waveguide structure with tapered gain regions is used as laser core. The process of preparing double-channel ridge-type waveguide laser epitaxial structure includes lithographic, etching, metallization (P-side: sputtering TiPtAu, N-side: evaporating AuGeNi), facet coating with electron cyclotron resonance (ECR) method (HR (high reflective coatings) = 90%, AR (antireflcctive coatings) = 5% ), and thinning. The P-side-up-mounted devices with TO3 package are measured. The output power above 440 mW and the saturation current above 3 A have been achieved. The measured far-field divergence angle is 40° × 14°.

关 键 词：激光技术 应变量子阱激光器 光纤拉曼放大器 14xx nm抽运源 锥形增益区 

分 类 号：TN248.4[电子电信—物理电子学]