硅片直接键合工艺中的热过程  

Thermal Processes During Silicon Direct Bonding

作　　者：曹广军[1] 秦祖新[1] 余跃辉 彭昭廉[1] 

机构地区：[1]华中理工大学固体电子学系,湖北武汉430074

出　　处：《微电子学》1993年第6期47-49,55,共4页Microelectronics

摘　　要：本文介绍了一种利用硅片直接键合(SDB)技术制作Si/Si衬底的方法。从理论上研究了键合过程中的热过程,如键合界面区中氧的扩散和杂质的再分布。利用SDB方法制成了p-n^+二极管,其击穿电压为500V,正向压降略小于0.7V,测得的少子寿命约为7.5μs。A technique to prepare Si/Si substrate using silicon direct bonding(SDB)is described in the paper. Thermal processes,including the diffusion of oxygen and the redistribution of the dopant in the bonding interface,have been theoretically studied. The p-n+ diodes have been experimentally fabricated using substrates prepared with SDB. Tt shows a breakdown voltage of 500V with positive voltage drop less than 0. 7V. The lifetime of the minority carriers measured is about: 7. 5us.

关 键 词：硅片直接键合 健合界面 击穿电压 

分 类 号：TN305[电子电信—物理电子学]