薄膜厚度对ZnO∶Ga透明导电膜性能的影响  

Thickness dependence of properties of ZnO∶Ga films deposited by r.f. magnetron sputtering

作　　者：余旭浒[1] 马瑾[1] 计峰[1] 王玉恒[1] 张锡健[1] 程传福[2] 马洪磊[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100 [2]山东师范大学物理系,山东济南250014

出　　处：《功能材料》2005年第2期241-243,共3页Journal of Functional Materials

基　　金：教育部科学技术研究重点资助项目(重点02165);博士点基金资助项目(20020422056)

摘　　要：采用射频磁控溅射法在玻璃衬底上低温制备出镓掺杂氧化锌(ZnO∶Ga)透明导电膜,研究了薄膜的结构、电学和光学性质随薄膜厚度的变化关系。制备的ZnO∶Ga是具有六角纤锌矿结构的多晶薄膜,最佳择优取向为(002)方向。随着薄膜厚度的增加,衍射峰明显增强,晶粒增大。薄膜的最低电阻率为 3.9×10-4Ω·cm,在可见光范围内平均透过率达到了85%以上。Gallium doped zinc oxide (ZnO:Ga) films were prepared on glass substrates by r.f. magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZnO:Ga films were studied for different thickness in detail. The obtained films were polycrystalline with a hexagonal wurtzite structure and grow preferentially oriented in the (002) crystallographic direction in the ZnO grains. It was observed that with an increase in film thickness, the crystallite size of the films were increased. The lowest electrical resistivity was found to be about 3.9 × 10-4 Ω&middotcm and the average transmittance in the visible range was over 85%.

关 键 词：磁控溅射 ZNO:GA 薄膜厚度 光电性质 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055