SOI晶体质量分析技术  

ANALYSIS TECHNIQUES FOR SOI CRYSTAL QUALITY

作　　者：张鹏飞[1] 钱佩信[1] 

机构地区：[1]清华大学微电子所,北京100084

出　　处：《微细加工技术》1993年第1期32-37,共6页Microfabrication Technology

摘　　要：本文评述了腐蚀金相技术、物理化学技术和电学测试技术等晶体质量分析手段,研究了这些方法在SOI晶膜检测中的应用,对于SOI质量鉴定和SOI工艺评价具有实用价值。Several testing approaches of crystal quality have been discussed, including coriosion and metallography technique, physicochemical technique and electrical testing technique. Their applications in analysis of SOI crystal films have been studied, which prove to be practical in appraisal of SOI quality and evaluation of SOI process technology.

关 键 词：半导体材料 SOI 晶体质量 质量分析 

分 类 号：TN304[电子电信—物理电子学]