GaAs低能Si^+及SiF^+离子注入研究  

INVESTIGATION OF LOW ENERGY Si^+ AND SiF^+ IMPLANTATION IN GaAs

作　　者：关安民[1] 李钧[1] 石华君 夏冠群[1] 沈鸿烈[1] 江炳尧[1] 朱南昌[1] 陈酋善 

机构地区：[1]中国科学院上海冶金研究所,上海200050

出　　处：《微细加工技术》1993年第3期23-27,共5页Microfabrication Technology

基　　金：国家自然科学基金;中国科学院离子束开放实验室资助

摘　　要：本文对30keV Si^+和分子离子S_1F^+注入半绝缘GaAs的行为进行了研,究注入Si^+样品的Si原子纵向分布,与相同条件下用SICT模拟程序理论计算出的分布相一致,经灯光900℃10秒RTA,电激活率可达60％,电化学C—V测得的载流子纵向分布与注入态SIMS结果相同,可以获得近0.2μm的GaAS有源层。而注入分子离子SiF^+样品,虽注入层较浅,但灯光退火后,电激活率很低。因此,用分子离子SiF^+注入以形成GaAs超薄有源层是不相宜的。此外,根据X—射线双晶衍射的结果还对GaAs注入Si^+和SiF^+的退火行为进行了讨论。An investigation on the Si+ and SiF+ implantation in GaAs With 30 keV energy is depicted.The measured depth profile of implanted Si+ is in agreement with that calculated by SICT simulation program.After 900℃10' RTA with lamp the electiic activation reached up to 60%.The carrier depth profile measured by electrochemical C-V method coincided with that measured by SIMS for pre-annealing implanted sample 0.2um thick activated layer was obtained.In case of SiF+ implantation the resultant doped layer was thinner. However,the electric activation of it remained quite low after RTA. So that to form thin activated layer of GaAs by SiF+ implantation isn't applicable. Moreover,according to the lesults obtained by x-ray double crystal diffraction a discussion on the annealing behavior of Si+ and SiF+ implantation in GaAs are presented.

关 键 词：离子注入 砷化镓 硅 氟化硅 

分 类 号：TN305.3[电子电信—物理电子学]