In掺杂ZnO薄膜的制备及结构特性研究  

Properties and structure characterization of Indium-doped ZnO thin films

作　　者：朋兴平[1] 杨映虎[1] 季涛[1] 方泽波[1] 王印月[1] 

机构地区：[1]兰州大学物理科学与技术学院,甘肃兰州730000

出　　处：《兰州大学学报（自然科学版）》2005年第1期82-85,共4页Journal of Lanzhou University(Natural Sciences)

基　　金：甘肃省自然科学基金资助项目(ZS011-A25-050-C)

摘　　要：通过射频反应共溅射法在硅衬底上制备了不同In掺杂量的ZnO薄膜,表征了薄膜的结构和表面形貌,研究了In掺杂量对znO薄膜的结构特性的影响.掠角X射线衍射分析结果表明制备的样品为ZnO薄膜,θ-2θ X射线衍射分析结果表明样品具有小的应力和C轴择优取向;原子力显微镜测试结果表明样品的颗粒大小和应力同其(002)衍射峰强度有关.薄膜具有较低的电阻率(10-1-100Ω·cm).当In掺杂量为3％时,样品的(002)衍射峰强度最高、压应力较小(7.3x108N/m2).Indium-doped zinc oxide films of various contents of In were deposited on silicon substrates by RF reactive co-sputtering. The structure and surface morphology of the resulting samples were investigated by means of X-ray diffraction and atomic force microscopy. The effect of In doping on the structures of the films was analyzed. It was found that the films had preferred C-axis orientation and small biaxial stress. The intensity of ZnO (002) peak was related to the grain size. The films had low resistivity (10-1-100Ω·cm). When contents of In is 3%, the film had highly C-axis orientation and small compressive biaxial stress(7.3×108 N/m2).

关 键 词：ZNO薄膜 In掺杂 射频反应共溅射 结构 

分 类 号：O782[理学—晶体学]