化学气相沉积过程中Si的引入对硬质合金金刚石涂层附着力的影响  

Enhancement of Adhesion of Diamond Coatings to Cemented Carbide Substrates by Introducing Silicon to the Chemical Vapor Deposition Process

作　　者：樊凤玲[1] 唐伟忠[1] 黑立富[1] 吕反修[1] 刘素田[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《金刚石与磨料磨具工程》2005年第1期31-35,共5页Diamond & Abrasives Engineering

摘　　要：利用微波等离子体化学气相沉积方法,以H2、CH4和八甲基环四硅氧烷(D4)为原料,在硬质合金基体上沉积了金刚石涂层。与一般只使用H2、 CH4为原料时的情况相比,金刚石涂层与硬质合金基体间的附着力有了一定程度的提高。对涂层断面的成分分析表明,Si在涂层与基体间的界面处有富集的倾向,而这将有助于抑制Co对涂层附着力的不利影响,提高金刚石涂层的附着力。Diamond coatings were deposited on cemented carbide substrates with H2, CH4 and D4 as precursors by using microwave plasma chemical vapor deposition technique. Compared with the usual method of using only H2 and CH4 , the adhesion of diamond coatings to the substrates was enhanced. Composition analysis on the cross section revealed that Si has a tendency to congregate to the interface between the coatings and the substrates, and this would be helpful in enhancing the adhesion of diamond coatings to the substrates.

关 键 词：微波等离子体化学气相沉积 八甲基环四硅氧烷 金刚石涂层 附着力 硬质合金 

分 类 号：TQ164[化学工程—高温制品工业]