Cu/Zr-Si-N/Si金属化系统制备及退火气氛对其热稳定性的影响  

Preparation and Effect of Annealing Ambient on Thermal Stability of Cu/ZrSiN/Si Structure

作　　者：王颖[1] 朱长纯[1] 宋忠孝[2] 刘君华[1] 

机构地区：[1]西安交通大学电子与信息工程学院,西安710049 [2]西安交通大学金属材料强度国家重点实验室,西安710049

出　　处：《Journal of Semiconductors》2004年第12期1634-1638,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :60 0 3 60 10 )~~

摘　　要：采用磁控溅射法在 n型〈111〉晶向的 Si衬底上形成了 Zr- Si- N薄膜及 Cu/ Zr- Si- N/ Si金属化系统 .将 Cu/ Zr-Si- N/ Si金属化系统样品分别在真空及 H2 / N2 (体积比为 1∶ 9)气氛中 80 0℃退火 1h.对 Zr- Si- N薄膜和退火后的金属化系统样品进行 X射线衍射、X射线光电子能谱、扫描电镜、薄层电阻率及俄歇电子能谱测试与分析 .结果表明 ,Zr- Si- N阻挡层是以 Zr N晶体与非晶相 Si3N4 或其他 Si- N化合物的复合结构形式存在 .经过两种气氛退火后的样品均没有发生阻挡层失效 ,但与真空退火相比 ,H2 / N2 退火气氛由于不存在残余 O2 的作用而表现出较低的 Cu膜薄层电阻率及较好的 Cu/ Zr- Si- N/ Si界面状态 .Zr-Si-N diffusion barrier and Cu/Zr-Si-N/Si contact systems were deposited by magnetron sputtering technique.The Cu/Zr-Si-N/Si structures were annealed in vacuum and H 2/N 2 ambient at 800℃ for 1h,respectively.The Cu/Zr-Si-N/Si structures were characterized using X-ray diffraction(XRD),scanning electron microscopy(SEM),four-point probe sheet resistance measurements(R s),and Auger electron spectroscopy(AES),respectively.The analysis of Zr-Si-N diffusion barrier indicates that the existing states of Si and Zr in the films are Si 3N 4-like phase and ZrN phase.It is evident that the residual oxygen in vacuum annealing ambient can increase the sheet resistances of Cu/Zr-Si-N/Si contact structures.The thermal stabilities of Cu/Zr-Si-N/Si structures are maintained when annealed in both ambient at 800℃.Compared with vacuum annealing,the H 2/N 2 ambient annealing can improve the properties of the structures such as the sheet resistances of Cu films and the interface conditions.[KH2/3D]

关 键 词：扩散阻挡层 金属化 退火 

分 类 号：TN405[电子电信—微电子学与固体电子学]