热处理对两种铜膜结合强度的影响  

Effect of Heat Treatment on the Peel Strength of Two Kinds of Cu Film

作　　者：梁彤祥[1] 刘杨秋[1] 张世骥[1] 

机构地区：[1]清华大学,北京100084

出　　处：《稀有金属材料与工程》2004年第12期1341-1343,共3页Rare Metal Materials and Engineering

摘　　要：采用 PVD 和 CVD 技术制备 Cu/TiN/PI 试样。研究表明,TiN 薄膜可以有效地阻挡 Cu 向 PI 基板内部扩散。CVD工艺制备的 Cu 膜内部残余应力很小,Cu 膜有相对高的结合强度;而 PVD 制备的 Cu 膜,在有 TiN 阻挡层存在的情况下,Cu 膜内存在拉应力,拉应力降低了 Cu 膜结合强度。300℃退火可以消除膜内残余应力,结合强度提高。Copper-polyimide specimens were presented by chemical vapor deposition (CVD) and physical vapor deposition (PVD) methods, and TiN thin films were deposited by PVD as a diffusion barrier. TiN barriers have shown to be very effective against copper diffusion. The effect of annealing treatment on the adhesion characteristics of copper films were studied. CVD copper films showed small residual stress and high adhesion strength, but for PVD copper film, much residual stress left in copper film when TiN barrier was used. The adhesion improvement by annealing treatment was attributed to the removal of tensile residual stress in copper films in Cu/TiN/PI.

关 键 词：热处理 基板 铜薄膜 TIN 

分 类 号：TN405[电子电信—微电子学与固体电子学]