宽束冷阴极和端部霍尔离子源对薄膜透过率和应力的影响  

Influence of Broad Beam Cold Cathode and End Hall Ion Sources on Transmissivity and stress

作　　者：刘文军[1] 弥谦[1] 秦君君[2] 方勇[1] 杨利红[1] 

机构地区：[1]西安工业学院,陕西西安710032 [2]中国科学院西安光学精密机械研究所,陕西西安710068

出　　处：《应用光学》2005年第2期51-53,共3页Journal of Applied Optics

摘　　要：　在宽束冷阴极离子源和端部霍尔离子源辅助沉积情况下,利用南光ZZS700-1/G箱式镀膜机,通过实验分别验证了这两种离子束辅助沉积对光学膜层透过率和应力的影响。通过对大量实验数据进行分析,得出利用低能量和大电流离子束辅助沉积光学薄膜时,膜层性能优于高能量离子束辅助沉积膜层。分析了膜层特性改变的原因,并提出了合理的工艺参数。实验结果表明,低能量、大电流的离子束辅助沉积使光学薄膜的性能更佳。Under the conditions of ion beam-assisted deposition (IBAD) using broad beam cold cathode and end Hall ion sources, utilizing the box type of Nanguang ZZS700-1/G coater,the influences of two IBADs on transmissivity and stress have been demonstrated respectively.With the analyses of a great deal of experimental datas, the properties of the optical thin-film got by IBAD with low energy and high current are better than that got by high energy IBAD. The reasons of the property variation of flim layers is analyzed and the processing parameters are given in this paper. The experiments show that IBAD with low energy and high current makes the layer properties much better.

关 键 词：宽束冷阴极离子源 端部霍尔离子源 离子束辅助沉积 光学薄膜 

分 类 号：TB43[一般工业技术]