铜薄膜与Al_2O_3陶瓷界面结合力的IBAD过渡层增强  

ENHANCEMENT OF COPPER FILM ON AI_2O_3 WITH AN ION BEAM ASSISTED DEPOSITED INTERMEDIATE METAL LAYER

作　　者：杨杰[1] 王晨[1] 陶琨[1] 范毓殿[1] 

机构地区：[1]清华大学材料科学与工程系,北京100084

出　　处：《真空科学与技术》1993年第5期352-355,共4页Vacuum Science and Technology

基　　金：国家自然科学基金;中关村分析测试基金

摘　　要：利用离子束辅助淀积(IBAD)方法在Al_2O_3陶瓷基片上镀制过渡金属层,然后在此过渡层上进一步用电子束蒸发镀制铜导电薄膜。这种复合方法镀制的铜膜在具有低电阻率的同时,界面附着力有大幅度增加。在本文实验条件下,有IBAD铜或钛过渡层薄膜的附着力比没有过渡层的薄膜附着力分别增加了5倍和8倍。Metal interface layer by ion beam assisted deposition (IBAD) between the Al_2O_3 substrate and copper surface film deposited by electron beam is made. The mechanical and electronic properties of the composite film are studied. The experimental results show that the composite film has lower resistivity than that of IBAD film and has better interface adhesion than that of the film by electron beam evaporation.

关 键 词：陶瓷基片 铜 薄膜 IBAD 镀膜 

分 类 号：O484[理学—固体物理]