1.3μm高速PIN光电二极管  

1.3 μm High Speed PIN Photodiode

作　　者：陶启林[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2001年第4期271-274,共4页Semiconductor Optoelectronics

摘　　要：综合考虑高速光电探测器的频率特性和响应度 ,优化设计了GaInAs/InPPIN光电二极管的结构参数 ,解决了长波长高速光电探测器制作中的关键技术 ,如高纯、超薄GaInAs/InP材料的液相外延生长、有源区的浅结扩散技术、为降低器件漏电采用的双层钝化膜技术和小光敏面的光耦合技术等 ,并采用同轴封装结构实现了高速光电探测器的高频封装。研制的GaInAs/InPPIN高速长波长光电探测器的 3dB带宽达到 2 0GHz ,响应度为 0 .7A/W ,暗电流小于The specific property of frequency and sensitivity for a high speed photodetector has been taken into consideration.Structure parameters of GaInAs/InP PIN photodiode are optimized.Key technologies of developing high speed photodetectors have been worked out,such as epitaxy of high pure and extra thin GaInAs/InP material,shallow junction diffusion in active area,technology of double layer film passivation for reduction of leakage current,coupling of small light sensitivity area with fibre,and high speed photodetector microwave packaging with coaxial structure.As a result,a long wavelength high speed GaInAs/InP PIN photodetector has been developed,whose 3 dB bandwidth has reached 20 GHz,with the responsibility of ≥0.70 A/W,dark current of <5 nA.

关 键 词：光电二极管 微波封装 GAINAS/INP 

分 类 号：TN364[电子电信—物理电子学]