直拉法硅表面层熔体流动所遵循的线性规律  

Linear Law Governing the Flow of Silicon Melt in the Surface Layer during Czochralski Process

作　　者：李英春[1] 秦福[1] 万群[1] 

机构地区：[1]北京有色金属研究总院

出　　处：《上海金属（有色分册）》1989年第1期7-10,共4页

摘　　要：本文定量地研究了硅自由表面层熔体的流动规律,用大量实验数据确立了自由表面层熔体径向流动速度与熔体纵横比(D/H)值的线性对应关系。根据这个关系可以成功地解释和处理硅单晶生长过程中的许多相关问题。The law governing the flow of silicon melt in the surface layer is quantitatively studied with the linear relation between the radial flow speed of silicon melt in the surface layer and the value of D/H defined by a large quantity of experiment data. Many problems involved in the growing process of silicon single crystals can be explained and settled in accordance with the relation defined.

关 键 词：直拉法 硅单晶 晶体生长 熔体 

分 类 号：O793[理学—晶体学]