应变超晶格In_(0.15)Ga_(0.85)As/GaAs的电镜和光谱研究  

Study of Strained In_(0.15)Ga_(0.85)As/GaAs Superlattices by Photoreflectance and Transmission Electron Microscopy

作　　者：高翔[1] 张允强[1] 孙娟[1] 彭正夫 蒋树声[2] 章灵军 

机构地区：[1]南京电子器件研究所,210016 [2]南京大学固体微结构实验室,210008 [3]上海红外物理国家实验室,200083

出　　处：《固体电子学研究与进展》1993年第3期197-200,共4页Research & Progress of SSE

摘　　要：用光调制反射谱和透射电镜技术研究分子束外延生长的应变超晶格In_(0.15)Ga_(0.85)As/GaAs,并讨论了实验结果。Strained In0.15Ga0.85As/GaAs superlattices on GaAs(001) substrate grown by MBE have been studied by using photoreflectance(PR)and transmission electron microscopy (TEM). Their results are discussed.

关 键 词：分子束外延 INGAAS/GAAS 电镜 光谱 

分 类 号：TN304.26[电子电信—物理电子学]