HVIC中的高压器件——RESURF结构LDMOSFET  

High-voltage device in HVCIC——LDMOSFET in RESURF structure

作　　者：徐家权[1] 郎金荣 叶润涛[1] 朱大中[1] 

机构地区：[1]浙江大学信电系 [2]八七一厂

出　　处：《浙江大学学报（自然科学版）》1993年第1期26-34,共9页

基　　金：浙江省科委自然科学基金

摘　　要：RESURF(减小表面电场)结构的LDMOSFET(水平沟道二次扩散MOS场效应晶体管)是HVIC(高压集成电路)中较为理想的高压输出器件。本文对RESURF结构的LDMOSFET进行了理论与计算机分析,为探求该器件的设计依据及其与双极器件相兼容的工艺方案,设计了一个包含有NPN,PNP晶体管及不同漂移区长度的RESURF试验模型,并进行了工艺流片,获得了耐压为350V与低压双极器件相兼容的高压RESURF结构的LDMOSFET。LDMOSFET (Lateral Channel Double Diffusion MOSFET)in RESURF(Reduce Surface Field)structure is an ideal high voltage output device in HVIC(High-Voltage IC). In this paper a theoretic analysis and computer simulation to LDMOSFET in RESURF structure were carried out. In order to find the design rules amd the compatible processing with bipolar devices, testing drvices of LDMOSFET in RESURF structure with different length of drift region were designed combined with NPN and PNP transistors. After processing a LDMOSFET in RESURF structure with 350V breakdown voltage was obtained and was compatible with low vlotage bipolar transistors.

关 键 词：高压器件 高压IC 功率IC HVIC 

分 类 号：TN4[电子电信—微电子学与固体电子学]