supported by the 2011 PhD Programs Foundation of the Ministry of Education of China(No.20110185110003)
In order to reduce the chip area and improve the reliability of HVICs, a new high-voltage level-shifting circuit with an integrated low-voltage power supply, two PMOS active resistors and a current mirror is proposed....
A novel level shift circuit featuring with high dV/dt noise immunity and improved negative V_S capacity is proposed in this paper.Compared with the conventional structure,the proposed circuit adopting two cross-couple...
A novel level-shift LDMOS (lateral double-diffused metal oxide semiconductor) structure with the HV (high voltage) -interconnection for a 600 V-HVIC (high voltage integrated circuit) on thick SOI (silicon on in...