SiGe／Si量子阱结构材料的激子发光谱  

Photoluminescence Spectra from SiGe/Si Strained Layer Quantum Well Structures

作　　者：黄大鸣[1] 杨敏[1] 盛篪[1] 卢学坤[1] 龚大卫[1] 张翔九[1] 王迅[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,复旦大学李政道物理学综合实验室

出　　处：《Journal of Semiconductors》1994年第3期213-216,共4页半导体学报（英文版）

基　　金：国家科委基础及应用基础研究重点项目;国家自然科学基金;国家教委优秀年轻教师基金;上海市科委启明星计划资助

摘　　要：在用分子束外延生长的ＳｉＧｅ／Ｓｉ多量子阱结构中，观察到激子发光光谱，从无声子参与的或ＴＯ－声子参与的激子发光峰位能量，计算了量子阱中合金的组份，并与通过Ｘ－射线衍射谱得到的结果作了比较，发现在Ｇｅ的组份比较小时，利用激子发光峰位能量确定合金组份比利用Ｘ－射线衍射谱更为方便和精确．Abstract The excitonic transitions were observed in photoluminescence spectrum from SiGe/Si strained layer quantum well structure grown by solid source molecular beam epitaxy. From the peak energy of no-phonon or TO-phonon exciton line, the Ge composition in quantum well layers was determined. The result was compared with that obtained from the X-ray diffraction spectrum, and we found that it is easier and more accurate to determine the alloy composition from the excitonic photoluminescence spectra than from X-ray diffraction measurements for the structures with small Ge composition.

关 键 词：SIGE/SI 量子阱 激子 发光谱 

分 类 号：TN304.2[电子电信—物理电子学]