低温分子束外延GaAS薄膜的研究  

Study of GaAs Layers Grown by MBE at Low Temperature

作　　者：邓航军[1] 范缇文[1] 王占国[1] 梁基本[1] 朱战萍[1] 李瑞钢[1] 

机构地区：[1]中国科学院半导体研究所,中国科学院半导体材料科学开放实验室

出　　处：《Journal of Semiconductors》1994年第5期317-321,共5页半导体学报（英文版）

摘　　要：我们利用分子束外延方法生长了低温ＧａＡｓ薄膜，并应用Ｘ射线双晶衍射、ＴＥＭ等手段对其进行了初步研究．发现原生样品和树底之间存在晶格失配．随着退火温度的上升，晶格失配逐渐消失．ＴＥＭ观察到６００，７００，８５０℃退火后的样品中存在大量的砷沉淀物．沉淀物大致呈球形．砷沉淀物的直径随着退火温度的上升而线性地增大，而密度却随退火温度的上升指数地下降．Abstract GaAs layers were grown by molecular beam epitaxy at low temper ature(LT-MBE GaAs) and studied by X-ray double crystals diffraction and TEM.We have observed that as-grown LT-MBE GaAs layer has a 0.14% increase in lattice parameters, the lattice mismatch decreases with increasing annealing temperature.TEM showed there were arsenic precipitates in annealed samples. Average diameter of arsenic precipitates in LT-MBE GaAs increases linearly with increasing annealin temperature, and density decreases exponentially with increasing annealing temperature.

关 键 词：分子束外延 砷化镓 薄膜 

分 类 号：TN304.23[电子电信—物理电子学]