TiSi_2　Polycide　LDD　MOS工艺研究  

Investigation on Technology for TiSi_2 Polycide LDD MOS

作　　者：徐秋霞[1] 龚义元[1] 张建欣 扈焕章[1] 汪锁发[1] 李卫宁 

机构地区：[1]中国科学院微电子中心研究部

出　　处：《Journal of Semiconductors》1994年第5期361-366,共6页半导体学报（英文版）

摘　　要：本文着重研究了０．６μｍＴｉＳｉ２ＰｏｌｙｃｉｄｅＬＤＤＮＭＯＳ器件工艺技术．用ＲＩＥ刻蚀获得了０．６μｍ严格各向异性的精细结构２分析研究表明ＴＥＯＳＳｉＯ２膜厚ｔｆ、多晶硅栅的剖面倾角θ是影响侧壁宽度Ｗ的重要因素，经优化后可控制Ｗ为０．３０～０．３２μｍ；在Ａｌ与Ｓｉ之间引入一层ＴｉＮ／Ｔｉ复合层作为Ａｌ－Ｓｉ间的扩散势垒层，获得了良好的热稳定性．上述工艺技术已成功地应用于０．６μｍＴｉＳｉ２ＰｏｌｙｃｉｄｅＬＤＤＥ／ＤＭＯＳ３１级环形振荡器的研制，其平均缴延迟为３１０Ｐｓ（０．２９ｍＷ／级），工作电压５伏．Abstract Technologies of 0.6μm TiSi2 polycide LDD NMOS devices are studied.The 0.6μm strictly anisotropic fine structure was obtained by RIE etching. Analytical results show, that TEOS film thichness tf and profile inclination θ are important factors to affect the side wall width, the optimum W is 0.30-0.32μm A TiN/Ti compound layer was introduced between Al and St as the diffusion barrier.A good thermal stability is obtained. The above-mentioned technologies have been successfully applied to the development of 0.6μm TiSi2 polycide LDD E/D MOS 31-stage ring oscillators, which possess an average stage delay of 310ps(0.29mW/stage) operated at 5V.

关 键 词：MOS 多晶硅复合栅 场效应 工艺 

分 类 号：TN386.1[电子电信—物理电子学]