硼掺杂多晶硅薄膜电阻率的温度特性  

Temperature Characteristics of Boron-Doped Polysilicon Film Resiativity

作　　者：刘晓为[1] 张国威[1] 刘振茂[1] 理峰 

机构地区：[1]哈尔滨工业大学

出　　处：《Journal of Semiconductors》1994年第6期429-434,共6页半导体学报（英文版）

摘　　要：本文研究了用于制作压阻传感器的硼掺杂ＬＰＣＶＤ多晶硅薄膜电阻率的温度特性．在室温～４５０℃较高温度范围，实验发现电阻率与温度的关系中存在一个极小值，理论分析表明极小值所对应的温度正比于晶界势垒高度，理论分析与实验结果相符合．通过对影响薄膜电阻率温度特性诸因素的分析讨论，提出了减小多晶硅薄膜电阻温度系数的最佳途径．Abstract The temperature characteristics of resistivity of the boron-doped poly silicon films used for the fabrication of piezoresistive sensors have been investigated.There is a minimum resistivity between the room temperature and 450℃. The theoretical analysis shows that the temperature of the minimum resistivity is directly proportional to the potential barrer-height of the grain boundaries in polysilicon. The theoretical analysis is in agreement with the experimental results. By the analysis and discussion to the factors effecting on the temperature characteristics of the film resistivity, the optimum way to decrease the temperature coefficients of the polysilicon film resistors bas been proposed.

关 键 词：多晶硅 膜膜 电阻率 硼 掺杂 温度 

分 类 号：TN304.120[电子电信—物理电子学]